Manufacturing Description Module Manufacturer: Kingston
Module Part Number: KVT8FP-HYC
DRAM Manufacturer: Hynix
DRAM Components: Not determined
Module Manufacturing Date: Week 29, 2012
Module Manufacturing Location: Shanghai, China
Module Serial Number: DC258212h
Module PCB Revision: B (42h)
DRAM Die Revision: B (42h)
Physical & Logical Attributes Fundamental Memory Class: DDR3 SDRAM
Module Speed Grade: DDR3-1600K
Module Type: UDIMM (133,35 mm)
Module Capacity: 4096 MB
Reference Raw Card: B1 (6 layers)
Initial Raw Card Designer: SK hynix
Module Nominal Height: 29 < H <= 30 mm
Module Thickness Maximum, Front: 1 < T <= 2 mm
Module Thickness Maximum, Back: 1 < T <= 2 mm
Number of DIMM Ranks: 2
Address Mapping from Edge Connector to DRAM: Mirrored
DRAM Device Package: Standard Monolithic
DRAM Device Package Type: 78-ball FBGA
DRAM Device Die Count: Not specified
Signal Loading: Not specified
Number of Column Addresses: 10 bits
Number of Row Addresses: 15 bits
Number of Bank Addresses: 3 bits (8 banks)
DRAM Device Width: 8 bits
Programmed DRAM Density: 2 Gb
Calculated DRAM Density: 2 Gb
Number of DRAM components: 16
DRAM Page Size: 1 KB
Primary Memory Bus Width: 64 bits
Memory Bus Width Extension: 0 bits
Supported Voltage Levels: 1.50 V
DRAM Timing Parameters Fine Timebase Dividend: 5
Fine Timebase Divisor: 2
Fine Timebase: 0,0025 ns
Medium Timebase Dividend: 1
Medium Timebase Divisor: 8
Medium Timebase: 0,125 ns
Clock Cycle Time (tCK min): 1,250 ns
CAS# Latencies Supported (tCL): 6T, 7T, 8T, 9T, 10T,
11T
CAS# Latency Time (tAA min): 13,125 ns
RAS# to CAS# Delay Time (tRCD min): 13,125 ns
Row Active to Row Active Delay (tRRD min): 6,000 ns
Row Precharge Delay Time (tRP min): 13,125 ns
Active to Precharge Delay Time (tRAS min): 35,000 ns
Act to Act/Refresh Delay Time (tRC min): 48,125 ns
Refresh Recovery Delay Time (tRFC min): 160,000 ns
Write Recovery Time (tWR min): 15,000 ns
Write to Read Command Delay (tWTR min): 7,500 ns
Read to Precharge Command Delay (tRTP min): 7,500 ns
Four Active Windows Delay (tFAW min): 30,000 ns
RZQ / 6 Drive Strength: Supported
RZQ / 7 Drive Strength: Supported
DLL-Off Mode Support: Supported
Thermal Parameters Extended Temperature Range: 0-95 °C
Extended Temperature Refresh Rate: 2X (85-95 °C)
Auto Self Refresh (depending on temperature): Supported
Module Thermal Sensor: Not Incorporated
On-die Thermal Sensor Readout: Not supported
Partial Array Self Refresh: Not supported
SPD Protocol SPD Revision: 1.1
SPD Bytes Total: 256
SPD Bytes Used: 176
SPD Checksum: 199Ch (OK)
CRC covers bytes: 0-116
Part number details JEDEC DIMM Label: 4GB 2Rx8 PC3-12800U-11-11-B1
Frequency CAS RCD RP RAS RC RFC RRD WR WTR RTP
800 MHz 11 11 11 28 39 128 5 12 6 6
667 MHz 10 9 9 24 33 107 4 10 5 5
667 MHz 9 9 9 24 33 107 4 10 5 5
533 MHz 8 7 7 19 26 86 4 8 4 4
533 MHz 7 7 7 19 26 86 4 8 4 4
400 MHz 6 6 6 14 20 64 3 6 3 3